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Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and A1N Cooling

机译：使用双向接触和A1N冷却的未来自适应无线系统的改进型RF设备

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This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the improved device performance that can be achieved. In particular, high-quality SOG varactors have been developed and an overview is given of a number of innovative highly-linear circuit configurations that have successfully made use of the special device properties. A high flexibility in device design is achieved by two-sided contacting because it eliminates the need for buried layers. This aspect has enabled the implementation of varactors with special Ndx -2 doping profiles and a straightforward integration of complementary bipolar devices. For the latter, the integration of AlN heatspreaders has been essential for achieving effective circuit cooling. Moreover, the use of Schottky collector contacts is highlighted also with respect to the potential benefits for the speed of SiGe heterojunction bipolar transistors (HBTs).
机译：本文回顾了特殊的RF /微波硅器件实现方案，该过程允许器件的两侧接触：DIMES开发的背晶片接触玻璃硅（SOG）衬底转移技术（STT）。在这项技术中，金属传输线可以放置在低损耗玻璃基板上，而硅器件的电阻/电容寄生效应可以通过直接的双面接触而最小化。这里将重点放在可以实现的改进设备性能上。特别是，已经开发了高质量的SOG变容二极管，并概述了许多创新的高度线性电路配置，这些配置已成功利用了特殊的器件特性。通过双面接触可实现器件设计的高度灵活性，因为它消除了对埋层的需求。该方面使得能够实现具有特殊的Ndx -2掺杂分布的变容二极管以及互补双极型器件的直接集成。对于后者，AlN散热器的集成对于实现有效的电路冷却至关重要。此外，在提高SiGe异质结双极晶体管（HBT）速度的潜在好处方面，肖特基集电极触点的使用也得到了强调。

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